Materials used in Semiconductor Manufacturing
Silicon, symbol Si, is the most commonly used basic building block of integrated circuits. Silicon is a semiconductor, which means that its electrical behavior is between that of a conductor and an insulator at room temperature. With the proper addition of dopant elements, p-n junctions can be formed on silicon. Useful electronic components and integrated circuits can be built from p-n junctions. Aside from being used as semiconductor substrate, silicon is also widely used as dielectric in integrated circuits, usually in the form of silicon dioxide. Dielectric layers are used to isolate conductive lines and the individual components in the circuit from each other. Polycrystalline silicon, or polysilicon, is also used for making resistors or conductors in integrated circuits.
Silicon is also widely used in semiconductor packaging, being the main ingredient of plastic encapsulants for integrated circuits. Silicon is also used in die overcoats. Silicon is obtained by heating silicon dioxide (SiO2), or silica, with a reducing agent in a furnace. Silicon dioxide is the main component of ordinary sand.
Aluminum, symbol Al, is a lightweight metal with silvery appearance. It is the most abundant metallic element on earth.
Aluminum is used in many aspects of semiconductor manufacturing. On the integrated circuit, Al metal lines are commonly used as the main conductor between components, mainly because of its low resistivity (2.7 mohm-cm). As a thin film, it also has good adherence to silicon dioxide. When used for 1С metallization, Al is usually very lightly doped with other elements such as Si and/or Cu to improve its characteristics and reliability.
In semiconductor assembly, ceramic packages are composed mainly of alumina. Aluminum is also used for wire bonding integrated circuits in ceramic packages.
Gold, symbol Au, is a soft metallic element that is bright yellowish in color. A good conductor of heat and electricity, it is also the most malleable and ductile of all metals.
Gold is used in many aspects of semiconductor manufacturing, particularly in the assembly or packaging processes. Its most widespread use is in wire bonding. Because of gold's excellent conductivity and ductility, it is extensively used in making wires for the connection of the integrated circuit to the leads of the package. Aside from manufacturability, the ductility of gold wires offers one more advantage when used in plastic-encapsulated devices, i.e., it makes the wires resistant to wire breaking during the encapsulation process.
KEYS
UNIT I
Text I
Exercise 4
1True
2False
3True
4False
5True
6False
Text II
| Exercise 2 | Exercise 3 | Exercise 4 | Exercise 9 |
| 1 G | 1True | 1 D | 1 D |
| 2 E | 2False | 2 E | 2 F |
| 3 D | 3False | 3 G | 3 B |
| 4 B | 4False | 4 B | 4 H |
| 5 A | 5False | 5 H | 5 E |
| 6 C | 6False | 6 I | 6 I |
| 7 A | 7 A | ||
| 8 F | 8 J | ||
| 9 C | 9 C | ||
| 10 G |
LISTENING
Exercise 1
| Quantity | Letter | SI Units (Sommerfeld) | SI Units (Kennelly) | CGS Units (Gaussian) |
| Field | H | A/m | A/m | Oersteds |
| Flux Density (Magnetic Induction) | B | Tesla | Tesla | Gauss |
| Flux | ф | Weber | Weber | maxwell |
| Magnetization | M | A/m | - | erg.Oe-1.cm-3 |
FINAL TEST
| Exercise 2 | Exercise 3 |
| 1 B | 1False |
| 2 A | 2True |
| 3 D | 3False |
| 4 A | 4False |
| 5 C | 5False |
| 6True | |
| 7False |
UNIT II
Text I
| Exercise 2 | Exercise 3 | Exercise 4 | Exercise 8 |
| 1 C | 1True | 1 C | 1 C |
| 2 G | 2True | 2 H | 2 D |
| 3 F | 3False | 3 G | 3 A |
| 4 A | 4False | 4 F | 4 B |
| 5 I | 5False | 5 A | |
| 6 B | 6False | 6 D | |
| 7 D | 7 E | ||
| 8 B |
Text III
| Exercise 3 | Exercise 6. Problem 1 | Exercise 6. Problem 2 |
| 1 A | 1A=6.530circular mils | 1A=375.000square mils |
| 2 D | 2A=5.1287square mils | 2A=477.000circular mils |
| 3 C | ||
| 4 B | ||
| 5 B |
Text IV
| Exercise 1 | Exercise 2 | Exercise 3 |
| 1 F | 1False | R= 4.41W |
| 2 D | 2False | |
| 3 C | 3False | |
| 4 B | 4True | |
| 5 E | 5False | |
| 6 A | 6True |
Text V
Exercise 4. Problem 2
I= 0.434 A
Text VI
| Exercise 3 | Exercise 7 | Exercise 9 |
| 1 A | 1conductor | 1False |
| 2 F | 2conductivity | 2True |
| 3 C | 3insulator | 3True |
| 4 D | 4superconductor | 4False |
| 5 E | 5superconductivity | 5False |
| 6 B | ||
| 7 G |
LISTENING
| Exercise 2 | Exercise 3 |
| 1movable charges | 1thermally |
| 2potential difference | 2offer |
| 3Ohm’s law | 3movable |
| 4non-metallic conductors | 4Ohm’s law |
| 5electromagnetic field | 5high…null resistance |
| 6limit to the current | 6generate |
| 7non-conducting materials | 7cross-sectional area |
| 8electrical resistance |
FINAL TEST
| Exercise 2 | Exercise 3 |
| 1False | 1 C |
| 2False | 2 B |
| 3False | 3 A |
| 4True | 4 C |
| 5True | 5 A |
| 6False |
UNIT III
Text I
| Exercise 3 | Exercise 5 |
| 1conductivity | 1 D |
| 2exhibit | 2 G |
| 3suitable | 3 H |
| 4inhomogeneous | 4 I |
| 5rectifiers | 5 F |
| 6consumption | 6 J |
| 7application | 7 A |
| 8detectors | 8 E |
| 9variety | 9 C |
| 10characteristic | 10 B |
| 11consequently |
Text III
| Exercise 2 | Exercise 4 |
| 1 G | 1 D |
| 2 D | 2 A |
| 3 A | 3 B |
| 4 F | 4 G |
| 5 H | 5 E |
| 6 B | 6 F |
| 7 C | 7 C |
Text IV
Exercise 2
E
D
C
A
B
LISTENING
| Exercise 3 | Exercise 4 |
| 1False | 1 B |
| 2False | 2 D |
| 3True | 3 E |
| 4False | 4 H |
| 5True | 5 G |
| 6True | 6 C |
| 7False | 7 A |
| 8 F |
FINAL TEST
| Exercise 1 | Exercise 2 |
| 1False | 1 B |
| 2False | 2 C |
| 3False | 3 A |
| 4False | 4 C |
| 5True | 5 C |
| 6False | 6 B |
| 7True | 7 B |
REFERENCES
1Cogbell J.R. Foundations of Electrical Engineering. London, 1996.
2Eric H. Glendinning, Norman Glendinning. Electrical and Mechanical Engineering. OUP, 2001.
3Godman A., Payne E. Longman Dictionary of Scientific Usage. Longman Group Ltd., 1989.
4Noel M. Morris. Mastering Electrical Engineering. The Macmillan Press Ltd., London, 1991.
5Бух М.А., Зайцева Л.П. Микроэлектроника: настоящее и будущее./Учебное пособие по английскому языку для технических вузов. – М.: Изд-во «Высшая школа», 2004.
6Кушникова Г.К. Electricity. Обучение профессионально-ориентированому чтению./Учебное пособие. – М.: Изд-во «Высшая школа», 2004.
7www.wikipedia.com
8www.tpub.com
9www.hammerzone.com
10www.logging.bham.ac.uk
11www.bbc.co.uk
12www.hyperphysics.phy-astr.gsu.edu
CONTENT
UNIT I……………………………………………………………………. 3
Magnetism
UNIT II…………………………………………………………………… 26
Conductors
UNIT III………………………………………………………………….. 50
Semiconductors
ANNOTATION SECTION……………………………………………... 67
glossary……………………………………………………………… 78
THE LIST OF CHEMICAL ELEMENTS…………………………….. 82
Tapescripts……………………………………………………………84
Keys………………………………………………………………………86
references…………………………………………………………...90
Евсеева Арина Михайловна
Жаркова Светлана Викторовна
Ким Владимир Сергеевич
АНГЛИЙСКИЙ ЯЗЫК
Учебное пособие по профессиональному иностранному языку
модуль «Электротехническое материаловедение»
Научный редактор Кандидат филологических наук, доцент,
зав.кафедрой АЯ №2 ИЯК ТПУ
Болсуновская Людмила Михайловна
Подписано к печати 26.06.2006
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